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| Hauptseite > Online First > Numerical simulation of coherent spin-shuttling in a QuBus with charged defects |
| Hauptseite > Online First > Numerical simulation of coherent spin-shuttling in a QuBus with charged defects |
| Preprint | FZJ-2025-05804 |
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2025
arXiv
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Please use a persistent id in citations: doi:10.48550/ARXIV.2512.03588
Abstract: Recent advances in coherent conveyor-mode spin qubit shuttling are paving the way for large-scale quantum computing platforms with qubit connectivity achieved by spin qubit shuttles. We developed a simulation tool to investigate numerically the impact of device imperfections on the spin-coherence of conveyor-mode shuttling in Si/SiGe. We simulate the quantum evolution of a mobile electron spin-qubit under the influence of sparse and singly charged point defects placed in the Si/SiGe heterostructure in close proximity to the shuttle lane. We consider different locations of a single charge defect with respect to the center of the shuttle lane, multiple orbital states of the electron in the shuttle with $g$-factor differences between the orbital levels, and orbital relaxation induced by electron-phonon interaction. With this simulation framework, we identify the critical defect density of charged point defects in the heterostructure for conveyor-mode spin qubit shuttle devices and quantify the impact of a single defect on the coherence of a qubit.
Keyword(s): Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ; Quantum Physics (quant-ph) ; FOS: Physical sciences
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