Journal Article FZJ-2026-01447

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EXAFS sheds light on short-range ordering in G e 1 − x S n x heteroepitaxial layers grown by MBE and CVD

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2025
APS College Park, MD

Physical review materials 9(6), 064601 () [10.1103/PhysRevMaterials.9.064601]

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Abstract: The local arrangement of atoms in an alloy impacts its electronic band structure and, consequently, itsfundamental physical properties. This work investigates the short-range order of tin atoms in binary Ge1−xSnxsemiconductors epitaxially grown on Ge-buffered Si (001) substrates. Samples featuring Sn content up to 13at.% were analyzed by x-ray absorption fine structure spectroscopy at the Sn-K edge. The study reveals howthe growth method and its process parameters, like temperature, or the epitaxial built-up strain affect the localatomic ordering of tin within the alloys. While the deposition technique seems to have a marginal effect on theSn short-range ordering, the growth temperature and Sn content systematically influence the bonding angles Sn.Ge-Sn next neighbor coordination shells, whereas the interatomic distances remain largely unaffected. In the firstcoordination shell Sn-Ge are strongly favored over Sn-Sn, while the opposite happens in the next coordinationshell, where Sn-Sn are systematically favored. These insights into the relationship of growth condition and layerproperties enable to identify the nature of the large variety of electronic and optical properties measured inGe1−xSnx layers.

Keyword(s): Basic research (1st) ; Condensed Matter Physics (2nd)

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Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
Research Program(s):
  1. 5234 - Emerging NC Architectures (POF4-523) (POF4-523)

Appears in the scientific report 2025
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Medline ; Creative Commons Attribution CC BY 4.0 ; OpenAccess ; Clarivate Analytics Master Journal List ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection
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 Datensatz erzeugt am 2026-01-29, letzte Änderung am 2026-02-23


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