Journal Article

FZJ-2026-03176

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Impact of laser energy density on engineering resistive switching dynamics in self-rectifying analog memristors based on BiFeO3 thin films

Zhao, X. ; Li, K. ; Chen, Z. ; Dellith, J. ; Dellith, A. ; Diegel, M. ; Blaschke, D. ; Menzel, S.FZJ* ; Polian, I. ; Schmidt, H. ; Du, N. (Corresponding author)FZJ*

2024
American Inst. of Physics Melville, NY

This record in other databases:    

Please use a persistent id in citations: doi:10.1063/5.0196718  doi:10.34734/FZJ-2026-03176

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)

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Database coverage:
; ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; National-Konsortium ; PubMed Central ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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