Journal Article

FZJ-2026-04222

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Origin of the inhomogeneous nanoscale resistivity in chromium doped V2O3

Mohr, J. ; Wang, Y. ; Xu, X. ; Wang, R. ; Wouters, D. J. ; Waser, R.FZJ* ; Nag, J. ; Bedau, D. (Corresponding author)

2025
Springer Nature [London]

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Please use a persistent id in citations: doi:10.1038/s41598-025-99892-y  doi:10.34734/FZJ-2026-04222

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)
2. BMBF 16ME0399 - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0399) (BMBF-16ME0399)
3. BMBF 16ME0398K - Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC II - (BMBF-16ME0398K) (BMBF-16ME0398K)

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