Journal Article

FZJ-2026-05973

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Structural and electronic properties of oxygen deficient HfO2-x thin films: from insulator to metal

Goß, K. ; Gutsche, A. ; Bonino, V. ; Praxedes, F. M. ; Segura-Ruiz, J. ; Martínez-Criado, G. ; Dittmann, R.

2026
Springer Nature [London]

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Please use a persistent id in citations: doi:10.1038/s41598-026-68628-x

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 5233 - Memristive Materials and Devices (POF4-523) (POF4-523)
2. DFG project G:(GEPRIS)528378584 - TRR 404 Zukunftsweisende Elektronik durch aktive Bauelemente in drei Dimensionen (Active-3D) (528378584) (528378584)
3. DFG project G:(GEPRIS)167917811 - SFB 917 Resistiv schaltende Chalkogenide für zukünftige Elektronikanwendungen: Struktur, Kinetik und Bauelementskalierung "Nanoswitches" (167917811) (167917811)

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