Critical oxygen concentration in hydrogenated amorphous silicon solar cells dependent on the contamination source

Woerdenweber, J.; Merdzhanova, T.; Stiebig, H.; Beyer, W.; Gordijn, A.

doi:10.1063/1.3357424

Journal Article

Critical oxygen concentration in hydrogenated amorphous silicon solar cells dependent on the contamination source

Woerdenweber, J.FZJ* ; Merdzhanova, T.FZJ* ; Stiebig, H.FZJ* ; Beyer, W.FZJ* ; Gordijn, A.

2010
American Institute of Physics Melville, NY

Applied physics letters 96, 103505 (2010) [10.1063/1.3357424]

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Please use a persistent id in citations: http://hdl.handle.net/2128/18110 doi:10.1063/1.3357424

Abstract: For hydrogenated amorphous silicon (a-Si:H) solar cells, the critical concentration of a given impurity defines the lowest concentration which causes a decay of solar cell efficiency. Values of 2-5 x 10(19) cm(-3) are commonly found for the critical oxygen concentration (C-O(crit)) of a-Si: H. Here we report a dependence of C-O(crit) on the contamination source. For state-of-the-art a-Si: H solar cells prepared at the same plasma deposition conditions, we obtain with a (controllable) chamber wall leak C-O(crit) similar to 2 x 10(19) cm(-3) while for a leak in the gas supply line a higher C-O(crit) of similar to 2 x 10(20) cm(-3) is measured. No such dependence is observed for nitrogen. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3357424]

Keyword(s): J

Classification:

Physics, Applied

Note: The authors thank R. Schmitz, A. Mueck, L. Niessen, U. Zastrow, R. van Aubel, and T. Zimmermann for contributions to this work. Part of the work was financed by the NRW Project No. EN/1008B "TRISO".

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