Journal Article

PreJuSER-11288

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI

Urban, C.FZJ* ; Sandow, C.FZJ* ; Zhao, Q. T.FZJ* ; Knoch, J.FZJ* ; Lenk, S.FZJ* ; Mantl, S.FZJ*

2010
Pergamon, Elsevier Science Oxford [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.sse.2009.12.017

Abstract: In this paper. we present a detailed study of nickel-silicide source and drain Schottky barrier MOSFETs on thin-body silicon-on-insulator. We use silicidation induced dopant segregation to lower the effective Schottky barrier height of NiSi source/drain to channel contacts. p-Type Schottky barrier MOSFFTs with boron segregation and n-type Schottky barrier MOSFETs with arsenic segregation show substantially improved electrical characteristics when compared to devices without dopant segregation. An inverse subthreshold slope close to the thermal limit and on-currents which are one order of magnitude higher than for Schottky barrier MOSFETs without dopant segregation are observed for devices with dopant segregation. A statistical analysis of Schottky barrier MOSFETs with dopant segregation reveals a strong dependence on the doping concentration of the electrical performance of both, p- and n-type devices. Source and drain resistances of 560 Omega mu m are extracted for n-type devices on 30 nm thick silicon-on-insulator. (C) 2009 Elsevier Ltd. All rights reserved

Keyword(s): J ; Schottky barrier MOSFET (auto) ; Metal source/drain (auto) ; NiSi (auto) ; Silicidation (auto) ; Dopant segregation (auto) ; Source/drain resistance (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (IBN-1)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010

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