% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Cheng:11289,
      author       = {Cheng, X. and Xu, D. and Sun, Q.-Q. and He, D. and Wang, Z.
                      and Yu, Y. and Zhang, D.W. and Zhao, Q.},
      title        = {{A}l2{O}3/{N}b{A}l{O}/{A}l2{O}3 sandwich gate dielectric
                      film on {I}n{P}},
      journal      = {Applied physics letters},
      volume       = {96},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-11289},
      pages        = {022904},
      year         = {2010},
      note         = {This work was supported by the following Chinese
                      foundation: NSF (Grant No. 10775166), Zhejiang Province STF
                      (Grant No. 2008C31002), and Wenzou STF (Grant No.
                      G20060099).},
      abstract     = {Al2O3/NbAlO/Al2O3 sandwich dielectric films were grown on
                      InP substrate and annealed. X-ray reflectivity measurements
                      suggested that 1.0 nm interfacial layer existed at InP
                      interface, x-ray diffraction and high resolution
                      transmission electron microscopy indicated the films were
                      crystallized. X-ray photoelectron spectra indicated the
                      oxidization of InP substrate, and the valence-band offset
                      between the dielectric film and InP interface was calculated
                      to be 3.1 eV. The electrical measurements indicated that the
                      leakage current density was 40 mA/cm(2) at gate bias of 1 V,
                      and the equivalent oxide thickness and the dielectric
                      constant were 1.7 and 20 nm, respectively.},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000273689400046},
      doi          = {10.1063/1.3292217},
      url          = {https://juser.fz-juelich.de/record/11289},
}