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| Home > Publications database > n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility |
| Journal Article | PreJuSER-12008 |
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2010
IEEE
New York, NY
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Please use a persistent id in citations: doi:10.1109/LED.2010.2058995
Abstract: The silicon germanium dots grown in the Stranski-Krastanow mode are used to induce biaxial tensile strain in a silicon capping layer. A high Ge content and correspondingly high Si strain levels are reached due to the 3-D growth of the dots. The n-channel MOS devices, referred to in this letter as DotFETs, are processed with the main gate segment above the strained Si layer on a single dot. To prevent the intermixing of the Si/SiGe/Si structure, a novel low-temperature FET structure processed below 400 degrees C has been implemented: The ultrashallow source/drain junctions formed by excimer-laser annealing in the full-melt mode of ion-implanted dopants are self-aligned to a metal gate. The crystallinity of the structure is preserved throughout the processing, and compared to reference devices, an average increase in the drain current of up to 22.5% is obtained.
Keyword(s): J ; CMOS (auto) ; excimer-laser annealing (ELA) (auto) ; low-temperature gate stack (auto) ; SiGe (auto) ; strain-enhanced mobility (auto) ; Stranski-Krastanow (S-K) growth mode (auto) ; ultrashallow source/drain junctions (auto)
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