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On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks
Mitrovic, I. Z. (Corresponding author) ; Hall, S.FZJ* ; Sedghi, N. ; Simutis, G. ; Dhanak, V. R. ; Bailey, P. ; Noakes, T. C. Q. ; Alexandrou, I. ; Engstrom, O. ; Lopes, J. M. J. ; Schubert, J.
2012
American Institute of Physics
Melville, NY
This record in other databases:
Please use a persistent id in citations: http://hdl.handle.net/2128/4843 doi:10.1063/1.4746790
Contributing Institute(s):
- Halbleiter-Nanoelektronik (PGI-9)
- Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
- 42G - Peter Grünberg-Centre (PG-C) (POF2-42G41) (POF2-42G41)
Appears in the scientific report
2012
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