Conference Presentation (Other)

FZJ-2013-00801

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png The d-DotFET: MOSFET based on locally strained silicon

Moers, J. (Corresponding author)FZJ* ; Gerharz, J.FZJ* ; Mussler, G.FZJ* ; Grützmacher, D.FZJ*

2012

Please use a persistent id in citations: http://hdl.handle.net/2128/4959

---

Contributing Institute(s):

1. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
2. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2012

---

Database coverage:

---