Journal Article

FZJ-2013-01816

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface

Dingemans, G. (Corresponding author) ; Einsele, F. ; Beyer, W.FZJ* ; van de Sanden, M. C. M. ; Kessels, W. M. M.

2012
American Institute of Physics Melville, NY

This record in other databases:    

Please use a persistent id in citations: http://hdl.handle.net/2128/17114  doi:10.1063/1.4709729

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Contributing Institute(s):

1. Photovoltaik (IEK-5)

Research Program(s):

1. 111 - Thin Film Photovoltaics (POF2-111) (POF2-111)

Appears in the scientific report 2012

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Database coverage:
; ; Allianz-Lizenz / DFG ; Current Contents - Social and Behavioral Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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