Diploma Thesis

FZJ-2013-01888

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Laser Annealing for shallow junction formation in As and B implanted Si0.64Ge0.36 layers

Luong, G. V. (Corresponding author)FZJ*

2012

Keyword(s): Unveröffentlichte Hochschulschrift

Note: TU Dortmund, Diplomarbeit, 2012

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2012

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