Low- and high-field transport properties of pseudomorphic InxGa1-xAs/lnP (0.73 kleiner gleich x kleiner gleich 0.82) p-type modulation-doped single-quantum-well structures

Lüth, H.; Uhlisch, D.; Schäpers, Th.; Kohl, A.; Heime, K.; Lengeler, B.; Mesquida Küsters, A.

doi:10.1063/1.356113

Journal Article

Low- and high-field transport properties of pseudomorphic InxGa1-xAs/lnP (0.73 kleiner gleich x kleiner gleich 0.82) p-type modulation-doped single-quantum-well structures

Lüth, H. ; Lengeler, B. ; Uhlisch, D. ; Schäpers, T.FZJ* ; Heime, K. ; Kohl, A. ; Mesquida Küsters, A.
American Institute of Physics

Journal of applied physics 75(7), 3507 - 3515 (1994) [10.1063/1.356113]

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Please use a persistent id in citations: http://hdl.handle.net/2128/3013

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ddc:530

Note: Record converted from JUWEL: 18.07.2013

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Halbleiter-Nanoelektronik (IBN-1)

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Record created 2013-07-18, last modified 2020-04-23

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