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The effect of growth temperature on AlAs/GaAs resonant tunnelling diodes

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Institute of Physics Publishing

Journal of physics / D 27, 175 - 178 () [10.1088/0022-3727/27/1/028]

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Note: Record converted from JUWEL: 18.07.2013
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  1. Halbleiter-Nanoelektronik (IBN-1)
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 Record created 2013-07-18, last modified 2020-04-23
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