Book	PreJuSER-136293

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Resistive switching in TiO2 thin films

Lin, Y. (Corresponding author)FZJ*

2011
Forschungszentrum, Zentralbibliothek, Jülich
ISBN: 9783893367078

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Please use a persistent id in citations: http://hdl.handle.net/2128/4391

Abstract: The continuing improved performance of the digital electronic devices requires new memory technologies which should be inexpensively fabricated for higher integration capacity, faster operation, and low power consumption. Resistive random access memory has great potential to become the front runner as the non volatile memory technology. The resistance states stored in such cell can remain for long time and can be read out none-destructively by a very small electrical pulse. In this work the typically two terminal memory cells containing a thin TiO2 layer are studied.

Keyword(s): RRAM (Resistive Random Access Memory) ; resistive switching ; titanate

Note: Record converted from JUWEL: 18.07.2013
Note: Zugl.: Diss., RWTH Aachen, 2010

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Appears in the scientific report 2013

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