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| Hauptseite > Publikationsdatenbank > Highly Transparent Conducting Polymer Top Contacts for Future III–Nitride Based Single Photon Emitters |
| Hauptseite > Publikationsdatenbank > Highly Transparent Conducting Polymer Top Contacts for Future III–Nitride Based Single Photon Emitters |
| Journal Article | FZJ-2013-04797 |
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2013
Inst. of Pure and Applied Physics
Tokyo
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Please use a persistent id in citations: doi:10.7567/JJAP.52.08JH10
Abstract: In this paper we report on a simple conductive polymer based contacting technology for III–nitride based nanostructures with respect to the electrical operation within the telecommunication wavelength range. Singularly addressable InN/GaN pyramidal nanostructures were selectively grown by metalorganic vapour phase epitaxy (MOVPE) and subsequently integrated into a high-frequency device layout for future ultrafast electro-optical operation. The employment of the p-conducting polymer poly(3,4-ethylenedioxythiophene)–poly(styrene sulfonate) (PEDOT:PSS) is found to increase the light transmittance up to 89% at a wavelength of 1550 nm compared to 72% in the case of a conventional Ni/Au thin layer top contact. DC measurements using a quasi operation mode for 1000 h reveal no degradation and only a moderate increase of the dark currents. Thus, conducting polymer technology shows tremendous potential for future highly efficient and reliable room temperature operation of nitride based single photon emitters (SPEs).
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