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| Home > Publications database > From conformal overgrowth to lateral growth of indium arsenide nano structures on silicon substrates by MOVPE |
| Journal Article | FZJ-2013-04799 |
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2013
Elsevier
Amsterdam [u.a.]
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Please use a persistent id in citations: doi:10.1016/j.jcrysgro.2012.09.059
Abstract: A methodology for the deposition of lateral InAs nanostructures on silicon by selective area metal organic vapor phase epitaxy (SA-MOVPE) is presented. Growth parameters which are optimal for the SA-MOVPE of conformal InAs overgrowth on GaAs nanowires were transferred to the lateral SA growth of InAs structures on patterned silicon substrates. The substrate pretreatment conditions and growth parameters were further optimized with respect to selectivity and nanostructure morphology. It is found that lateral growth of InAs nano structures can be achieved on patterned Si(110) as well as on patterned silicon on insulator (SOI) substrates. An investigation of the laterally grown InAs/Si nanowires' crystal structure revealed a faceted but nevertheless abrupt Si–InAs interface on the Si(110) substrate as well as relaxation and a high crystallinity of the deposited InAs on both Si template types. The morphology and crystallinity of laterally grown structures are discussed in detail and compared to that of vertical shell/core InAs/GaAs nanowires.
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