Journal Article

FZJ-2013-05777

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Epitaxial growth of europium monoxide on diamond

Melville, A. (Corresponding author) ; Mairoser, T. ; Schmehl, A. ; Fischer, M.Extern* ; Gsell, S. ; Schreck, M. ; Awschalom, D. D. ; Heeg, T. ; Holländer, B.FZJ* ; Schubert, J.FZJ* ; Schlom, D. G.

2013
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/16837  doi:10.1063/1.4833550

Abstract: We report the epitaxial integration of phase-pure EuO on both single-crystal diamond and onepitaxial diamond films grown on silicon utilizing reactive molecular-beam epitaxy. The epitaxialorientation relationship is (001) EuO k (001) diamond and [110] EuO k [100] diamond. The EuOlayer is nominally unstrained and ferromagnetic with a transition temperature of 6862K and asaturation magnetization of 5.560.1 Bohr magnetons per europium ion on the single-crystaldiamond, and a transition temperature of 6762K and a saturation magnetization of 2.160.1 Bohrmagnetons per europium ion on the epitaxial diamond film.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013

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Database coverage:
; ; Allianz-Lizenz / DFG ; Current Contents - Social and Behavioral Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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