Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)

CoordinatorWaser, R.
Grant period2012-05-01 - 2019-04-30
Funding bodyVSR/JARA
IdentifierG:(DE-Juel1)jpgi70_20120501

Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)

Note: JSC computation time grant
 

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A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO 3 -Based Memory Cell
Advanced electronic materials 4(7), 1800062 - () [10.1002/aelm.201800062]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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Ion migration in crystalline and amorphous HfO$_{X}$
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Journal of physics / Condensed matter 24(48), 485002 - () [10.1088/0953-8984/24/48/485002] BibTeX | EndNote: XML, Text | RIS

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 Datensatz erzeugt am 2013-12-02, letzte Änderung am 2020-09-21



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