Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys

Fournier-Lupien, J. -H.; Mussler, G.; Buca, D.; Hayazawa, N.; Pippel, E.; Wirths, S.; Desjardins, P.; Mukherjee, S.; Hartmann, J. M.; Moutanabbir, O.

doi:10.1063/1.4855436

Journal Article

FZJ-2013-06787

Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys

Fournier-Lupien, J. -. ; Mukherjee, S.Extern* ; Wirths, S.FZJ* ; Pippel, E. ; Hayazawa, N. ; Mussler, G.FZJ* ; Hartmann, J. M. ; Desjardins, P. ; Buca, D.FZJ* ; Moutanabbir, O. (Corresponding author)

2013
American Institute of Physics Melville, NY

Applied physics letters 103(26), 263103 (2013) [10.1063/1.4855436]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17341 doi:10.1063/1.4855436

Abstract: We investigated Raman vibrational modes in silicon-germanium-tin layers grown epitaxially on germanium/silicon virtual substrates using reduced pressure chemical vapor deposition. Severalexcitation wavelengths were utilized to accurately analyze Raman shifts in ternary layers with uniform silicon and tin content in 4–19 and 2–12 at. % ranges, respectively. The excitation using a633 nm laser was found to be optimal leading to a clear detection and an unambiguous identification of all first order modes in the alloy. The influence of both strain and composition on these modes is discussed. The strain in the layers is evaluated from Raman shifts and reciprocal space mapping data and the obtained results are discussed in the light of recent theoretical calculations.

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