Journal Article

PreJuSER-14689

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Localized edge states in two-dimensional topological insulators: Ultrathin Bi films

Wada, M. ; Murakami, S. ; Freimuth, F.FZJ* ; Bihlmayer, G.FZJ*

2011
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/10941  doi:10.1103/PhysRevB.83.121310

Abstract: We theoretically study the generic behavior of the penetration depth of the edge states in two-dimensional quantum spin Hall systems. We found that the momentum-space width of the edge-state dispersion scales with the inverse of the penetration depth. As an example of well-localized edge states, we take the Bi(111) ultrathin film. Its edge states are found to extend almost over the whole Brillouin zone. Correspondingly, the bismuth (111) 1-bilayer system is proposed to have well-localized edge states in contrast to the HgTe quantum well.

Keyword(s): J

Note: We are grateful to S. Blugel, T. Hirahara, T. Nagao, and S. Yaginuma for helpful discussions. This research was supported in part by MEXT KAKENHI (Grants No. 21000004 and No. 22540327).

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Contributing Institute(s):

1. Quanten-Theorie der Materialien (PGI-1)
2. Quanten-Theorie der Materialien (IAS-1)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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