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Femtosecond silicon K alpha pulses from laser-produced plasmas

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2002
APS College Park, Md.

Physical review / E 65(1), 016412 () [10.1103/PhysRevE.65.016412]

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Abstract: Ultrashort bursts of silicon Kalpha x-ray radiation from femtosecond-laser-produced plasmas have been generated. A cross-correlation measurement employing a laser-triggered ultrafast structural change of a CdTe-crystal layer (320 nm) shows a Kalpha pulse duration between 200 fs and 640 fs. This result is corroborated by particle in cell simulations combined with a Monte-Carlo electron stopping code and calculations on the structural changes of the crystal lattice.

Keyword(s): J


Note: Record converted from VDB: 12.11.2012

Contributing Institute(s):
  1. Zentralinstitut für Angewandte Mathematik (ZAM)
Research Program(s):
  1. Methoden und Systeme der Informationstechnik (I02)

Appears in the scientific report 2002
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 Record created 2012-11-13, last modified 2023-02-17


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