TY  - CONF
AU  - Hardtdegen, Hilde
AU  - Winden, Andreas
AU  - Fox, Alfred
AU  - Haab, Anna
AU  - Grützmacher, Detlev
AU  - Kordos, Peter
AU  - Gregusova, Dagmar
AU  - Maros, Michel
AU  - Mikulics, Martin
TI  - Micro-PL for MOVPE grown AlGaN/GaN HFET structure optimization
M1  - FZJ-2014-00599
SN  - 978-3-89336-870-9
SP  - 59 - 62
PY  - 2013
AB  - Micro-photoluminescence (μ-PL) studies were performed on AlGaN/GaN heterostructure field effect transistor
AB  - (HFET) structures with different gate recessing depths. It was found that μ-PL is the method of choice for
AB  - detecting strain in the lateral resolution relevant for HFET device length scales and therefore useful for
AB  - structure optimization. Strain is partially relaxed and non-uniform after recessing. The PL-results elucidate the
AB  - device characteristics and partially explain the reduced charge density observed.
T2  - 15th European Workshop on Metalorganic Vapour Phase Epitaxie
CY  - 2 Jun 2013 - 5 Jun 2013, Aachen (Germany)
Y2  - 2 Jun 2013 - 5 Jun 2013
M2  - Aachen, Germany
LB  - PUB:(DE-HGF)8
UR  - https://juser.fz-juelich.de/record/150545
ER  -