Journal Article

PreJuSER-15213

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Influence of the electronic structure on tunneling through ferroelectric insulators: Application to BaTiO3 and PbTiO33

Wortmann, D.FZJ* ; Blügel, S.FZJ*

2011
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/10938  doi:10.1103/PhysRevB.83.155114

Abstract: Electronic tunneling through ferroelectric insulators is considered to be a key ingredient of future oxide electronics. We investigate the role of the electronic band structure of the decaying electronic states in the band gap by first discussing the expected behavior of tunneling in the effective mass model. We demonstrate that, even for the simple prototype ferroelectric oxides in the perovskite structures PbTiO3 and BaTiO3, the basic assumption of the effective mass model is not appropriate, and that the correct interpretation of tunneling in these materials requires a material-specific description of the evanescent states as provided by the complex band structure.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Quanten-Theorie der Materialien (PGI-1)
2. Quanten-Theorie der Materialien (IAS-1)
3. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
4. Jülich-Aachen Research Alliance - Simulation Sciences (JARA-SIM)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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Database coverage:
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