Contribution to a conference proceedings/Contribution to a book

FZJ-2014-02938

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Towards future III-nitride based THz OEICs in the UV range

Fox, A. (Corresponding Author)FZJ* ; Mikulics, M.FZJ* ; Winden, A.FZJ* ; Hardtdegen, H.FZJ* ; Gregusova, D. ; Adam, R.FZJ* ; Sobolewski, R. ; Marso, M. ; Grutzmacher, D.FZJ* ; Kordos, P.

2012
IEEE

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Please use a persistent id in citations: doi:10.1109/ASDAM.2012.6418570

Abstract: A group III-nitride based MSM photodetector integrated with a MESFET in an OEIC circuit is presented exhibiting an exceptionally high 3 dB-bandwidth of 410 GHz. Advances towards circuit improvement by the future implementation of a gate recessed AlGaN/GaN HEMT device are reported. μ-PL is used directly on the processed device to optimize processing with respect to processing related strain and damage effects. It is demonstrated that μ-PL allows insight into device and material optimization which are the strategic key to improved future III-nitride based UV-optoelectronic integrated circuits (OEIC) operated up to the THz range. © 2012 IEEE.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Elektronische Eigenschaften (PGI-6)
3. JARA-FIT (JARA-FIT)

Research Program(s):

1. 423 - Sensorics and bioinspired systems (POF2-423) (POF2-423)

Appears in the scientific report 2013

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