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| Home > Publications database > Photoluminescence and Raman scattering studies of GaN nanowires obtained by top-down and bottom-up approaches |
| Contribution to a conference proceedings/Journal Article | FZJ-2014-03177 |
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2012
MRS
Warrendale, Pa.
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Please use a persistent id in citations: doi:10.1557/opl.2012.196
Abstract: We present comparative studies of optical properties of GaN nanowires (NWs) obtained by two different self-formation techniques: Plasma-Assisted Molecular Beam Epitaxy (PAMBE) growth; and plasma etching of GaN layers deposited by Metal-Organic Vapor Phase Epitaxy (MOVPE). The effects of the coalescence process on grown NW and plasma-induced defects in etched NWs have been studied by photoluminescence (PL) and Raman scattering. In MBE grown NWs, the coalescence-associated defects are extended toward the NW top for intermediate Ga flux. Using High Resolution Electron Microscopy of reactive plasma etching (RIE) NWs, it was found that NWs obtained with an optimal combination of inductive (ICP) and capacitive (RF) plasma are free of extended structural defects. The PL efficiency is strongly increased in plasma etched NWs. However, plasma-induced point defects have to be taken into account for explaining the changes of the PL spectra. Less plasma-induced degradation is observed for high ICP/RF power ratios. © 2012 Materials Research Society.
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