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@ARTICLE{Rieger:156128,
      author       = {Rieger, Torsten and Jörres, Torsten and Vogel, J. and
                      Biermanns, A. and Pietsch, U. and Grützmacher, Detlev and
                      Lepsa, Mihail Ion},
      title        = {{C}rystallization of ${H}f{O}_2$ in ${I}n{A}s/{H}f{O}_2$
                      core–shell nanowires},
      journal      = {Nanotechnology},
      volume       = {25},
      number       = {40},
      issn         = {1361-6528},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2014-04991},
      pages        = {405701},
      year         = {2014},
      abstract     = {We report the impact of deposition parameters on the
                      structure of HfO2 covering InAs nanowires (NWs) being
                      potential candidates for future field-effect transistors
                      (FETs). Molecular beam epitaxial-grown Au-free InAs NWs were
                      covered with HfO2 deposited by atomic-layer deposition. The
                      impact of the film thickness as well as the deposition
                      temperature on the occurrence and amount of crystalline HfO2
                      regions was investigated by high-resolution transmission
                      electron microscopy (TEM) and x-ray diffraction. Compared to
                      the deposition on planar Si substrates, the formation
                      probability of crystalline HfO2 on InAs NWs is significantly
                      enhanced. Here, even 3 nm thick films deposited at 250 °C
                      are partly crystalline. Similarly, a low deposition
                      temperature of 125 °C does not result in completely
                      amorphous 10 nm thick HfO2 films, they contain monoclinic as
                      well as orthorhombic HfO2 nanocrystals. Combining HfO2 and
                      Al2O3 into a laminate structure is capable of suppressing
                      the formation of crystalline HfO2 grains.},
      cin          = {PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000342503800007},
      doi          = {10.1088/0957-4484/25/40/405701},
      url          = {https://juser.fz-juelich.de/record/156128},
}