Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown $Sb_2Te_3$- and $Bi_2Te_3$-Based Topological Insulators

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Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown $Sb_2Te_3$- and $Bi_2Te_3$-Based Topological Insulators - FZJ-2014-05067

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