Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown $Sb_2Te_3$- and $Bi_2Te_3$-Based Topological Insulators

Olbrich, P.; Ganichev, S. D.; Mussler, G.; Plank, H.; Schneider, Claus Michael; Plucinski, L.; Weyrich, Ch.; Kampmeier, J.; Danilov, S. N.; Eschbach, M.; Golub, L. E.; Grützmacher, D.; Bel’kov, V. V.; Herrmann, T.

doi:10.1103/PhysRevLett.113.096601

Journal Article

FZJ-2014-05067

Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown $Sb_2Te_3$- and $Bi_2Te_3$-Based Topological Insulators

Olbrich, P. (Corresponding Author) ; Golub, L. E. ; Herrmann, T. ; Danilov, S. N. ; Plank, H. ; Bel’kov, V. V. ; Mussler, G.FZJ* ; Weyrich, C.FZJ* ; Schneider, C. M.FZJ* ; Kampmeier, J.FZJ* ; Grützmacher, D.FZJ* ; Plucinski, L.FZJ* ; Eschbach, M.FZJ* ; Ganichev, S. D.

2014
APS College Park, Md.

Physical review letters 113(9), 096601 (2014) [10.1103/PhysRevLett.113.096601]

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Please use a persistent id in citations: http://hdl.handle.net/2128/9114 doi:10.1103/PhysRevLett.113.096601

Abstract: We report on the observation of photogalvanic effects in epitaxially grown Sb2Te3 and Bi2Te3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac fermions driven back and forth by the terahertz electric field results in a dc electric current. Because of the “symmetry filtration” the dc current is generated by the surface electrons only and provides an optoelectronic access to probe the electron transport in TI, surface domains orientation, and details of electron scattering in 3D TI even at room temperature.

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