Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy

Zhang, B.; Mussler, G.; Jin, L.; Wang, X.; Zhao, Q.T.; Buca, D.; Zhang, M.; Holländer, B.; Mantl, S.; Hartmann, J.M.; Yu, W.

doi:10.1063/1.3601464

Journal Article

Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy

Zhang, B.FZJ* ; Yu, W.FZJ* ; Zhao, Q. T.FZJ* ; Mussler, G.FZJ* ; Jin, L.FZJ* ; Buca, D.FZJ* ; Holländer, B.FZJ* ; Hartmann, J. M. ; Zhang, M. ; Wang, X. ; Mantl, S.FZJ*

2011
American Institute of Physics Melville, NY

Applied physics letters 98, 252101 (2011) [10.1063/1.3601464]

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Please use a persistent id in citations: http://hdl.handle.net/2128/7330 doi:10.1063/1.3601464

Abstract: Epitaxial growth of Ni(Al)Si0.7Ge0.3 on relaxed Si0.7Ge0.3/Si(100) substrates was achieved via an Al interlayer mediated epitaxy. After annealing, most of the Al atoms from the original 3 nm interlayer diffused toward the surface but the remaining Al atoms in the epitaxial monogermanosilicide distributed uniformly, independent of the annealing temperatures. The incorporation of Al increases the transition temperature from the Ni-rich germanosilicide phase to the monogermanosilicide phase. The reduced Ni diffusion, the increased lattice constant due to substitutional Al, and the increased thermal expansion of monogermanosilicide are assumed to be the main mechanisms enabling the epitaxial growth of the quaternary silicide. (C) 2011 American Institute of Physics. [doi:10.1063/1.3601464]

Keyword(s): J ; aluminium alloys (auto) ; annealing (auto) ; diffusion (auto) ; epitaxial layers (auto) ; Ge-Si alloys (auto) ; ion beam assisted deposition (auto) ; lattice constants (auto) ; nickel alloys (auto) ; thermal expansion (auto) ; vacuum deposition (auto) ; vapour phase epitaxial growth (auto)

Classification:

Physics, Applied

Note: This work is supported by the German Federal Ministry of Education and Research (BMBF) via the MEDEA+project DECISIF (2T104). One of the authors, Bo Zhang, thanks the National Natural Science Foundation of China under Grants No. 61006088 and together with Wenjie Yu to the China Scholarship Council (CSC) for financial support.

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