Journal Article

PreJuSER-18677

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Tensile strained SiGe quantum well infrared photodetectors based on a light-hole ground state

Rauter, P. ; Mussler, G.FZJ* ; Grützmacher, D.FZJ* ; Fromherz, T.

2011
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/7368  doi:10.1063/1.3593134

Abstract: We report the fabrication and thorough characterization of tensile strained p-type SiGe quantum well infrared photodetectors (QWIPs) grown on a Si0.74Ge0.26 pseudosubstrate. The QWIPs operate from a light-hole (LH) ground state and feature responsivity peaks in both the terahertz and mid-infrared regimes with responsivity values up to 3.7 mA/W, originating from LH-LH, LH-heavy-hole, and LH-split-off-band transitions. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3593134]

Keyword(s): J

Note: Work supported by the FWF (SFB IROn, Grant No. F2512-N08) and GME, both Vienna.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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