Manipulating InAs nanowires with submicrometer precision

Flöhr, K.; Sladek, K.; Schäpers, Th.; Frielinghaus, R.; Haas, F.; Günel, H.Y.; Morgenstern, M.; Hardtdegen, H.; Meyer, C.; Grützmacher, D.; Liebmann, M.

doi:10.1063/1.3657135

Journal Article

Manipulating InAs nanowires with submicrometer precision

Flöhr, K. ; Liebmann, M. ; Sladek, K.FZJ* ; Günel, H. Y.FZJ* ; Frielinghaus, R.FZJ* ; Haas, F.FZJ* ; Meyer, C.FZJ* ; Hardtdegen, H.FZJ* ; Schäpers, T.FZJ* ; Grützmacher, D.FZJ* ; Morgenstern, M.

2011
American Institute of Physics [S.l.]

Review of scientific instruments 82, 113705 (2011) [10.1063/1.3657135]

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Please use a persistent id in citations: http://hdl.handle.net/2128/7369 doi:10.1063/1.3657135

Abstract: InAs nanowires are grown epitaxially by catalyst-free metal organic vapor phase epitaxy and are subsequently positioned with a lateral accuracy of less than 1 μm using simple adhesion forces between the nanowires and an indium tip. The technique, requiring only an optical microscope, is used to place individual nanowires onto the corner of a cleaved-edge wafer as well as across predefined holes in Si(3)N(4) membranes. The precision of the method is limited by the stability of the micromanipulators and the precision of the optical microscope.

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Note: We thank Eva Maynicke, Onder Gul, Martin Raux, and Christian Blomers for technical assistance and acknowledge financial support by the excellence initiative of the German federal government.

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