Strain-induced control of domain wall morphology in ultrathin ${\mathrm{PbTiO}}_{3}$ films

Jiang, Zhijun; Jia, C.-L.; Wang, Dawei; Sichuga, D.; Zhang, Ruizhi; Bellaiche, L.

doi:10.1103/PhysRevB.89.214113

Journal Article

FZJ-2015-01618

Strain-induced control of domain wall morphology in ultrathin ${\mathrm{PbTiO}}_{3}$ films

Jiang, Z. ; Zhang, R. ; Wang, D. (Corresponding Author) ; Sichuga, D. ; Jia, C.-L.FZJ* ; Bellaiche, L.

2014
APS College Park, Md.

Physical review / B 89(21), 214113 (2014) [10.1103/PhysRevB.89.214113]

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Please use a persistent id in citations: http://hdl.handle.net/2128/8430 doi:10.1103/PhysRevB.89.214113

Abstract: Ab initio effective Hamiltonian simulations reveal a strain-induced control of domain morphology in epitaxial PbTiO3 ultrathin films being under open-circuit electrical boundary conditions. More precisely, rather different out-of-plane domain structures are found to be the ground state, depending on the value of the misfit strain. Examples include domain walls lying in different crystallographic planes or even being wandering. Analysis of the computations allows us to reveal the precise interactions responsible for such strain-driven domain reorganization.

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