Contribution to a conference proceedings

FZJ-2015-02681

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png III-nitride nano-LEDs for single photon lithography

Trellenkamp, S.* ; Mikulics, M. (Corresponding Author)FZJ* ; Windelen, J.ICS-TAK* ; Arango, Y.FZJ* ; Moers, J.FZJ* ; Marso, M. ; Grützmacher, D.FZJ* ; Hardtdegen, H.FZJ*

2014

ISBN: 978-147995474-2

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Please use a persistent id in citations: doi:10.1109/ASDAM.2014.6998652

Abstract: We fabricated and tested III-nitride (p-GaN/MQW/n-GaN/sapphire) based nano-LEDs designed for operation in the single photon lithography technique. The band edge luminescence energy of the III-nitride nano-LEDs depends linearly on the structure size. Our studies provide clear evidence that our technological process for the vertically integrated nano-LED emitters is perfectly suited for long term operation without any indication of degradation effects. This novel technology shows strong potential for a future flexible single photon lithography [1] which is applicable for molecular photonic and electronic circuits.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2014

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