Journal Article

FZJ-2015-02686

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Micro-pixel light emitting diodes: Impact of the chip process on microscopic electro- and photoluminescence

Otto, I. (Corresponding Author) ; Mounir, C. ; Nirschl, A. ; Pfeuffer, A. ; Schäpers, T.FZJ* ; Schwarz, U. T. ; von Malm, N.

2015
American Inst. of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/16830  doi:10.1063/1.4918678

Abstract: We investigated the influence of a l-pixelated chip process on the photoluminescence (PL) andelectroluminescence (EL) of a monolithic InGaN/GaN based blue light emitting diode with a continuous n-GaN layer. Particularly, we observed the impact of the metallic p-contact on the PL emission wavelength. A PL wavelength shift in the order of 10 nm between contacted and isolated areaswas assigned to screening of internal piezoelectric fields due to charge carrier accumulation. lPLand lEL mappings revealed correlated emission wavelength and intensity inhomogeneities, causedby the epitaxial growth process. The edges of single pixels were investigated in detail via resonantconfocal bias-dependent lPL. No influence on the intensity was observed beyond 300 nm awayfrom the edge, which indicated a good working edge passivation. Due to the low lateral p-GaN conductivity, the lPL intensity was enhanced at isolated areas.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015

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Database coverage:
; ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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