Journal Article

FZJ-2015-02797

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields

Epping, A. (Corresponding Author)FZJ* ; Engels, S.FZJ* ; Volk, C.FZJ* ; Watanabe, K. ; Taniguchi, T. ; Trellenkamp, S. ; Stampfer, C.FZJ*

2013
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/pssb.201300295

Abstract: We report on the fabrication and electrical characterization of etched graphene single electron transistors (SETs) of various sizes on hexagonal boron nitride (hBN) in high magnetic fields. The electronic transport measurements show a slight improvement compared to graphene SETs on SiO2. In particular, SETs on hBN are more stable under the influence of perpendicular magnetic fields up to 9 T in contrast to measurements reported on SETs on SiO2. This result indicates a reduced surface disorder potential in SETs on hBN, which might be an important step toward clean and more controllable graphene quantum dots (QDs).

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)
3. PGI-8-PT (PGI-8-PT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)
2. 423 - Sensorics and bioinspired systems (POF2-423) (POF2-423)

Appears in the scientific report 2014

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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