Journal Article

FZJ-2015-03136

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Enhanced electrical and magnetic properties in La0.7Sr0.3MnO3 thin films deposited on CaTiO3-buffered silicon substrates

Adamo, C. ; Méchin, L. ; Heeg, T. ; Katz, M. ; Mercone, S. ; Guillet, B. ; Wu, S. ; Routoure, J.-M. ; Schubert, J.FZJ* ; Zander, W.FZJ* ; Misra, R. ; Schiffer, P. ; Pan, X. Q. ; Schlom, D. G. (Corresponding Author)

2015
AIP Publ. Melville, NY

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Please use a persistent id in citations: doi:10.1063/1.4915486

Abstract: We investigate the suitability of an epitaxial CaTiO3 buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La0.7Sr0.3MnO3 with silicon. The magnetic and electrical properties of La0.7Sr0.3MnO3 films deposited by MBE on CaTiO3-buffered silicon (CaTiO3/Si) are compared with those deposited on SrTiO3-buffered silicon (SrTiO3/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO3 buffer layer. These results are relevant to device applications of La0.7Sr0.3MnO3 thin films on silicon substrates.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015

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Database coverage:
; ; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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