Journal Article

PreJuSER-19389

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Quantitative determination of the metastability of flat Ag overlayers on GaAs(110)

Yu, H. ; Jiang, C. S. ; Ebert, P.FZJ* ; Wang, X. D. ; White, J. M. ; Niu, Q. ; Zhang, Z. ; Shih, C. K.

2002
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/1039  doi:10.1103/PhysRevLett.88.016102

Abstract: Atomically flat ultrathin Ag films on GaAs(I 10) can be formed through a kinetic pathway. However, such films are metastable and will transform to 3D islands upon high temperature annealing. Using scanning tunneling microscopy, we have measured quantitatively the layer-resolved metastability of flat Ag overlayers as they evolve toward their stable state, and deduced the corresponding kinetic barrier the system has to overcome in reaching the stable state. These results indicate that the metastability of the Ag overlayer is defined by the quantum nature of the conduction electrons confined within the overlayer.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Mikrostrukturforschung (IFF-IMF)

Research Program(s):

1. Kondensierte Materie (M02)

Appears in the scientific report 2002
Notes: This version is available at the following Publisher URL: http://prl.aps.org

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