Journal Article

FZJ-2015-03834

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Origin of the SET Kinetics of the Resistive Switching in Tantalum Oxide Thin Films

Nishi, Y. ; Menzel, S.FZJ* ; Fleck, K. ; Bottger, U. ; Waser, R.FZJ*

2014
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/LED.2013.2294868

Abstract: In this letter, we discuss the kinetics of the resistive switch effect in tantalum oxide thin films. The time to switch from the high resistance state to the low resistance state (SET) was measured by using pulse measurement technique. It was found that the SET switching time has a clear relationship with the power of the leakage current flowing under the applied voltage before the SET. Although the dependence of the SET time on the applied voltage differ from cell to cell, this relationship is universal among the different cells. This implies that the Joule heating effect is the dominant driving factor of the SET, rather than the applied voltage. In addition, this relationship can account for the faster switching speed at an elevated temperature.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2015

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Database coverage:
Current Contents - Engineering, Computing and Technology ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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