Journal Article

FZJ-2015-04180

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale

Valov, I. (Corresponding Author)FZJ*

2014
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/celc.201300165

Abstract: Resistive switching memories (RRAMs) are an emerging research field, which is currently of focused interest for both the interdisciplinary scientific community and industry. RRAMs are nano-electrochemical systems with great potential as a disruptive technology for the semiconductor industry as well as for a number of applications such as memory, logic and analog circuits, memristive operations, neuromorphic applications and computing. The present review aims to present the current state-of-the-art knowledge on redox-based resistive switching RRAMs, highlighting the role of the interfaces, discussing the electrochemical kinetics during formation of nanofilaments, and to relate them to the more fundamental issue of microscopic description of electrochemical processes at the atomic scale.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2015

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Database coverage:
Current Contents - Physical, Chemical and Earth Sciences ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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