Journal Article

FZJ-2015-05122

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Small-signal analysis of high-performance p- and n-type SOI SB-MOSFETs with dopant segregation

Urban, C. (Corresponding author) ; Emam, M. ; Sandow, C. ; Zhao, Q. T.FZJ* ; Fox, A.FZJ* ; Mantl, S.FZJ* ; Raskin, J.-P.

2010
Pergamon, Elsevier Science Oxford [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.sse.2010.04.013

Abstract: In this paper, we present fully-depleted Schottky barrier MOSFETs with dopant-segregated NiSi source and drain junctions. Schottky barrier MOSFETs with a channel length of 80 nm show high on-currents of 900 μA/μm for n-type devices with As segregation at Vgs − Vt = 3 V and Vds = 1.2 V and 427 μA/μm for p-type devices with B segregation at Vgs − Vt = −2.8 V and Vds = −1.2 V. A detailed high-frequency characterization proves the high-performance of the devices with cut-off frequencies fT of 117 GHz for n-type and 63 GHz for p-type Schottky barrier MOSFETs and clearly elucidates the effects of extrinsic and intrinsic device parameters as a function of the gate length.

Note: ResearchGate. Available from: http://www.researchgate.net/publication/222231467_Small-signal_analysis_of_high-performance_p-_and_n-type_SOI_SB-MOSFETs_with_dopant_segregation [accessed Aug 4, 2015].

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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