TY  - JOUR
AU  - Xu, Dawei
AU  - Cheng, Xinhong
AU  - Yu, Yuehui
AU  - Wang, Zhongjian
AU  - Cao, Duo
AU  - Xia, Chao
AU  - Liu, Linjie
AU  - Trellenkamp, Stefan
AU  - Mantl, Siegfried
AU  - Zhao, Qing-Tai
TI  - Improved LDMOS performance with buried multi-finger gates
JO  - Microelectronic engineering
VL  - 122
SN  - 0167-9317
CY  - [S.l.] @
PB  - Elsevier
M1  - FZJ-2015-05217
SP  - 29 - 32
PY  - 2014
AB  - SOI LDMOS with buried multi-finger gates (BFG) is proposed and fabricated. The BFG acts as field plate, modulating the lateral electric field distribution in the drift region (off-state) and enhances the carrier accumulation at the surface of the drift region (on-state). The proposed BFG SOI LDMOS shows a 13.6% increase of breakdown voltage, 24.4% reduction of on-resistance and 14.4% increase of the transconductance compared with the reference SOI LDMOS without BFG.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000336871100007
DO  - DOI:10.1016/j.mee.2014.03.005
UR  - https://juser.fz-juelich.de/record/203231
ER  -