Journal Article

PreJuSER-21126

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Polarization-reduced quaternary InAlGaN/GaN HFET and MISHFET devices

Ketteniss, N. ; Askar, A. ; Reuters, B. ; Noculak, A. ; Holländer, B.FZJ* ; Kalisch, H. ; Vescan, A.FZJ*

2012
IOP Publ. Bristol

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Please use a persistent id in citations: doi:10.1088/0268-1242/27/5/055012

Abstract: The reduction of the polarization charge in a GaN-based single-heterostructure field-effect transistor (HFET) by polarization engineering is proposed as a method for achieving normally off operation. The concept minimizes the dependence of the threshold voltage on the barrier layer thickness. Therefore, thicker gate dielectrics for suppression of gate leakage currents can be applied without a shift in threshold voltage. A polarization-reduced enhancement-mode (E-mode) InAlGaN/GaN HFET is presented and demonstrates the basic working principle. Also an insulated-gate device with only minor shift in threshold voltage compared to the HFET validates the new concept and demonstrates the advantages compared to commonly applied concepts for E-mode operation.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2012

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Database coverage:
Current Contents - Social and Behavioral Sciences ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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