Journal Article

PreJuSER-21907

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Scaling Potential of Local Redox Processes in Memristive SrTiO _{3} Thin-Film Devices

Dittmann, R.FZJ* ; Münstermann, R.FZJ* ; Krug, I.FZJ* ; Park, D.FZJ* ; Menke, T.FZJ* ; Mayer, J.FZJ* ; Besmehn, A.FZJ* ; Kronast, F.FZJ* ; Schneider, C. M.FZJ* ; Waser, R.FZJ*

2012
Inst. New York, NY [u.a.]

This record in other databases:  

Please use a persistent id in citations: doi:10.1109/JPROC.2012.2188771

Abstract: In this work, we address the following question: Where do the resistive switching processes take place in memristive thin-film devices of the single crystalline model material Fe-doped SrTiO3? We compare resistive switching induced by the tip of the atomic force microscope on the bare thin-film surface with the switching properties observed in memristive devices with Pt top electrode. In order to close the gap between these two approaches, we combine conductive-tip atomic force microscopy with a delamination technique to remove the top electrode of Fe-doped SrTiO3 metal-insulator-metal (MIM) structures to gain insight into the active switching interface with nanoscale lateral resolution. This enables us to prove the coexistence of a filamentary and area-dependent switching process with opposite switching polarities in the same sample. The spatially resolved analysis by transmission electron microscopy and photoelectron spectromicroscopy gives us some hints that the two switching types take place in device regions with different defect density and significant stoichiometry difference.

Keyword(s): J ; Device scaling (auto) ; memristive device (auto) ; redox process (auto) ; resistive switching (auto) ; transition metal oxides (auto)

Note: Manuscript received September 15, 2010; revised September 7, 2011; accepted February 7, 2012. Date of publication April 24, 2012; date of current version May 10, 2012. This work was supported in part by the Deutsche Forschungsgemeinschaft (SFB 917).

---

Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
3. Elektronische Eigenschaften (PGI-6)
4. Zentralabteilung für Chemische Analysen (ZCH)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2012

---

Database coverage:
; BIOSIS Previews ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

---