Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method

Kuzmik, J.; Javorka, P.; Kordos, P.; Alam, A.; Marso, M.; Heuken, M.

doi:10.1109/TED.2002.801430

Journal Article

Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method

Kuzmik, J.FZJ* ; Javorka, P.FZJ* ; Alam, A.FZJ* ; Marso, M.FZJ* ; Heuken, M.FZJ* ; Kordos, P.FZJ*

2002

IEEE Transactions on Electron Devices 49, 1496 - 1498 (2002) [10.1109/TED.2002.801430]

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Please use a persistent id in citations: http://hdl.handle.net/2128/1953 doi:10.1109/TED.2002.801430

Abstract: Self-heating effects and temperature rise in AlGaN/GaN HEMTs grown on silicon and sapphire substrates are studied, exploiting transistor dc characterization methods. A negative differential output resistance is observed for high dissipated power levels. An analytical formula for a source-drain current drop as a function of parasitic source resistance and threshold voltage changes is proposed to explain this behavior. The transistor source resistance and threshold voltage is determined experimentally at different elevated temperatures to construct channel temperature versus dissipated power transfer characteristic. It is found that the HEMT channel temperature increases rapidly with dissipated power and at 6 W/mm reaches values of similar to320degreesC for sapphire and similar to95degreesC for silicon substrate, respectively.

Keyword(s): J ; III-nitrides (auto) ; power FETs (auto) ; semiconductor device measurements (auto) ; semiconductor device thermal factors (auto)