Journal Article

PreJuSER-24637

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Element specific surface reconstructions of islands during surfactant-mediated growth on Si(111)

Antons, A.FZJ* ; Schroeder, K.FZJ* ; Voigtländer, B.FZJ* ; Cherepanov, V.FZJ* ; Berger, R.FZJ* ; Blügel, S.FZJ*

2002
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/1340  doi:10.1103/PhysRevLett.89.236101

Abstract: The early stages of surfactant- (As, Sb) mediated homoepitaxial growth on Si (111) are examined by scanning tunneling microscopy and extensive ab initio calculations of Si-n clusters (nless than or equal to12). The results reveal the different microscopic behavior of the two surfactants: On As-covered Si (111), one exclusively finds two-dimensional islands with double-layer height which show the (1x1) terrace structure. On Sb-covered Si (111), the islands show two different reconstructions: at the rim of the islands a (1x1) structure appears, while in the center the (root3xroot3) terrace structure is observed.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Grenzflächen und Vakuumtechnologien (ISG-3)
2. Theorie I (IFF-TH-I)
3. Theorie III (IFF-TH-III)

Research Program(s):

1. Kondensierte Materie (M02)

Appears in the scientific report 2002
Notes: This version is available at the following Publisher URL: http://prl.aps.org

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