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| Hauptseite > Publikationsdatenbank > Vibrational properties of ultrathin Ga2O3 films grown on Ni(100) |
| Hauptseite > Publikationsdatenbank > Vibrational properties of ultrathin Ga2O3 films grown on Ni(100) |
| Journal Article | PreJuSER-25273 |
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2002
Elsevier
Amsterdam
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Please use a persistent id in citations: doi:10.1016/S0039-6028(01)01897-0
Abstract: Growth and vibrational properties of ultrathin films of Ga2O3 on Ni(100) were investigated in the temperature range of 80-1200 K by using electron energy loss spectroscopy (EELS), Auger electron spectroscopy, and low energy electron diffraction (LEED). At 80 K, a 30 Angstrom thick Ga layer was deposited on the c(2 x 2)-oxygen structure prepared on Ni(I 00). Afterwards, the Ga layer was oxidized with oxygen until saturation. At 80 K, both the Ga layer and the oxidized Ga layer are amorphous. After annealing to room temperature a energy loss at similar to640 cm(-1) occurs. This loss is assigned to a vibrational excitation of Ga-O bonds in the Ga-oxide structure. Further annealing up to 700 K leads to the characteristic Fuchs-Kliever phonons of Ga2O3 at 305, 470 and 745 cm(-1) in the EEL spectrum and the LEED pattern of Ga oxide shows a weak diffuse ring structure of domains with long-range order but random orientation with respect to the substrate. The lattice constant is determined to be 2.8 Angstrom which corresponds to the distance between two O2- ions in the oxide lattice. (C) 2002 Elsevier Science B.V. All rights reserved.
Keyword(s): J ; gallium (auto) ; nickel (auto) ; oxidation (auto) ; electron energy loss spectroscopy (EELS) (auto) ; auger electron spectroscopy (auto) ; low energy electron diffraction (LEED) (auto) ; surface structure, morphology, roughness (auto) ; and topography (auto)
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