Development of double-sided microstructured Si(Li) detectors

Protic, R. K.; Krings, T.; Schleichert, R.

doi:10.1109/TNS.2002.801541

Journal Article

PreJuSER-26335

Development of double-sided microstructured Si(Li) detectors

Protic, R. K.FZJ* ; Krings, T.FZJ* ; Schleichert, R.FZJ*

2002
IEEE New York, NY

IEEE transactions on nuclear science 49, (2002) [10.1109/TNS.2002.801541]

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Please use a persistent id in citations: http://hdl.handle.net/2128/1625 doi:10.1109/TNS.2002.801541

Abstract: A new technique for manufacturing double-sided structured Si(Li) detectors has been established. The position-sensitive structure on the implanted p(+)-contact can be made smaller than 100 mum by photolithography followed by plasma etching of grooves to separate the position elements. By modifying this technique position-sensitive structures on a thin (similar to30 mum) Li-diffused contact were created. Areas of 50 mm x 50 mm were divided into 50 or 100 strips with a pitch of 1 mm or 500 mum, respectively. The strips were separated by similar to35-mum-deep and similar to50-mum-wide grooves. Measurements of the electrical resistance of the grooves and reverse current of the strips are presented. Charge splitting on the adjacent strips shows practically no charge loss through the groove. Small pixel effects are demonstrated on a Li-diffused contact (100 strips with the pitch of 500 mum) and on the first double-sided Si(Li) detector (50 x 50 strips with a pitch of 1 mm). By measuring the relative time distribution of the signal from both contacts it is possible to obtain some three-dimensional imaging capability.

Keyword(s): talk: San Diego 2001/11/04 ; double-sided microstructured Si(Li) detectors (auto) ; position-sensitive Si(Li) detectors (auto) ; silicon radiation detectors (auto) ; thin Li-diffused contacts (auto) ; three-dimensional position sensing (auto)