Journal Article

PreJuSER-26623

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Metal-germanium-metal ultrafast infrared detectors

Buca, D.FZJ* ; Winnerl, S.FZJ* ; Lenk, S.FZJ* ; Mantl, S.FZJ* ; Buchal, C.FZJ*

2002
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1960  doi:10.1063/1.1519958

Abstract: We demonstrate silicon-based ultrafast metal-semiconductor-metal (MSM) photodetectors for near infrared optocommunication wavelengths. They show a response time of 12.5 ps full width at half maximum (FWHM) at both 1300 and 1550 nm wavelengths. The overall external quantum efficiencies are 13% at 1320 nm and 7.5% at 1550 nm. The sensitive volumes are 270 nm thick Ge films, grown on Si(111) by molecular beam epitaxy. Interdigitated Cr metal top electrodes with 1.5-5 mum spacing and identical finger width form Schottky contacts to the Ge film. A Ti-sapphire femtosecond laser with an optical parametric oscillator and an electro-optic sampling system are used to evaluate the temporal response, which is limited by the transit time of the carriers between electrodes. In addition, results on Si-Ge MSM heterostructure detectors with plate capacitor geometry are presented. At 1550 nm an ultrafast response of 9.4 ps FWHM and an overall quantum efficiency of 0.9% are measured. (C) 2002 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2002
Notes: This version is available at the following Publisher URL: http://jap.aip.org

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